2SC4811

更新时间： 2024-01-25 14:35:42

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管
页数	文件大小	规格书
6页	132K
描述
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING

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技术参数
数据手册

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2SC4811 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

2SC4811 数据手册

DATA SHEET

DARLINGTON POWER TRANSISTOR

2SC4811

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)

FOR HIGH-SPEED SWITCHING

The 2SC4811 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such

as PWM control for pulse motors or brushless motors in OA and FA equipment.

In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus

contributing to mounting cost reduction.

FEATURES

• Auto-mounting possible in radial taping specifications

• Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions

• On-chip C-to-E reverse diode

• Fast switching speed

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)*

I^B(DC)

P^T**

Ratings

100

Unit

100

8.0

0.8

Total power dissipation

Junction temperature

Storage temperature

1.8

°C

T^j

150

−55 to +150

T^stg

* PW ≤ 300 µs, duty cycle ≤ 10%

** T^a= 25°C

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D15602EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

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2SC4811L	NEC	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 8A I(C) \| TO-126VAR	获取价格
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