Datasheet > 2SC4809R

2SC4809R

更新时间： 2024-09-24 23:20:19

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	49K
描述
TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 50MA I(C) \| SOT-416

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中文翻译

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数据手册

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2SC4809R 数据手册

Transistor

2SC4809

Silicon NPN epitaxial planer type

For high-frequency amplification/oscillation/mixing

Unit: mm

1.6±0.15

0.8±0.1

0.4

Features

■

●

High transition frequency f_T.

●

Small collector output capacitance C_oband common base reverse

transfer capacitance C_rb.

●

SS-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing.

Absolute Maximum Ratings (Ta=25˚C)

■

0.2±0.1

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

1:Base

2:Emitter

3:Collector

EIAJ:SC–75

SS–Mini Type Package

˚C

Collector power dissipation

Junction temperature

Storage temperature

P_C

125

T_j

125

Marking symbol : 1S

T_stg

–55 ~ +125

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

Collector cutoff current

V_CB= 10V, I_E= 0

Collector to emitter voltage

Emitter to base voltage

V_CEO

V_EBO

I_C= 2mA, I_B= 0

I_E= 10µA, I_C= 0

Forward current transfer ratio

h_FE

_CE= 4V, I_C= 5mA

400

0.5

2.7

Collector to emitter saturation voltage V_CE(sat)

I_C= 20mA, I_B= 4mA

GHz

Transition frequency

Collector output capacitance

Base time constant

f_T

V_CB= 4V, I_E= –5mA, f = 200MHz

1.4

1.9

1.4

C_ob

V_CB= 4V, I_E= 0, f = 1MHz

r_bb' · C_C

V_CB= 4V, I_E= –5mA, f = 31.9MHz

V_CB= 4V, I_E= 0, f = 1MHz

Common emitter reverse transfer capacitance C_rb

0.45

_CE= 4V, I_C= 100µA

h_FEratio

0.75

1.6

V_CE= 4V, I_C= 5mA

^*h_FERank classification

Rank

h_FE

75 ~ 130

1SP

110 ~ 220

1SQ

200 ~ 400

1SR

Marking Symbol

12 3

中文翻译

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2SC4810-AZ	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC4810-K	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC4810-K-AZ	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC4810K-T-AZ	RENESAS	获取价格	TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,5A I(C),SIP
2SC4810-L	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC4810-L-AZ	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC4810-M	RENESAS	获取价格	5A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3