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2SC4813

更新时间: 2024-09-24 22:52:43
品牌 Logo 应用领域
日电电子 - NEC 晶体开关晶体管
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6页 171K
描述
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

2SC4813 数据手册

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DATA SHEET  
SILICON POWER TRANSISTOR  
2SC4813  
NPN SILICON EPITAXIAL TRANSISTOR  
FOR HIGH-SPEED SWITCHING  
The 2SC4813 is a power transistor developed for high-speed switching and features high hFE and low VCE(sat).  
This transistor is ideal for use as a driver in DC/DC converters and actuators.  
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus  
contributing to mounting cost reduction.  
FEATURES  
• Low VCE(sat): VCE(sat) 0.3 V  
@IC = 3.0 A, IB = 30 mA  
• High hFE: hFE = 450 to 2,000 @VCE = 2.0 V, IC = 3.0 A  
• On-chip dumper-diode  
• Auto-mounting possible in radial taping specifications  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
Base current (DC)  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse)  
IB(DC)  
PT  
Conditions  
Ratings  
100  
Unit  
V
100  
V
7.0  
V
7.5  
A
PW 10 ms, duty cycle 2%  
Ta = 25°C  
10  
A
2.0  
A
Total power dissipation  
Junction temperature  
Storage temperature  
1.8  
W
°C  
°C  
Tj  
150  
55 to +150  
Tstg  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D15603EJ2V0DS00 (2nd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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