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2SC4738_07

更新时间： 2024-10-27 04:26:03
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器PC
页数 文件大小 规格书
3页 410K
描述
Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications

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2SC4738_07 数据手册

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2SC4738  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC4738  
Audio Frequency General Purpose Amplifier Applications  
Unit: mm  
•
•
High voltage and high current: V  
= 50 V, I = 150 mA (max)  
CEO C  
Excellent h  
linearity: h  
(I = 0.1 mA)/ h (I = 2 mA)  
C FE C  
FE  
FE  
= 0.95 (typ.)  
= 120~700  
•
•
•
High h : h  
FE FE  
Complementary to 2SA1832  
Small package  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
60  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5
V
I
150  
30  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
125  
−55~125  
C
T
j
T
stg  
JEDEC  
JEITA  
―
―
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-2H1A  
Weight: 2.4 mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 60 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
⎯
⎯
⎯
⎯
0.1  
0.1  
μA  
μA  
CBO  
CB  
EB  
E
I
= 5 V, I = 0  
C
EBO  
h
FE  
(Note)  
(sat)  
DC current gain  
V
= 6 V, I = 2 mA  
120  
⎯
700  
CE  
C
Collector-emitter saturation voltage  
Transition frequency  
V
I
= 100 mA, I = 10 mA  
⎯
80  
⎯
0.1  
⎯
0.25  
⎯
V
CE  
f
C
B
V
V
= 10 V, I = 1 mA  
MHz  
pF  
T
CE  
CB  
C
Collector output capacitance  
C
= 10 V, I = 0, f = 1 MHz  
2.0  
3.5  
ob  
E
Note: h classification Y (Y): 120~240, GR (G): 200~400, BL (L): 350~700  
FE  
(
) marking symbol  
Marking  
1
2007-11-01  
123

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