2SC4738
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4738
Audio Frequency General Purpose Amplifier Applications
Unit: mm
•
•
High voltage and high current: V
= 50 V, I = 150 mA (max)
CEO C
Excellent h
linearity: h
(I = 0.1 mA)/ h (I = 2 mA)
C FE C
FE
FE
= 0.95 (typ.)
= 120~700
•
•
•
High h : h
FE FE
Complementary to 2SA1832
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
60
50
V
V
Collector-emitter voltage
Emitter-base voltage
Collector current
5
V
I
150
30
mA
mA
mW
°C
°C
C
Base current
I
B
Collector power dissipation
Junction temperature
Storage temperature range
P
100
125
−55~125
C
T
j
JEDEC
JEITA
―
―
T
stg
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= 60 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
Emitter cut-off current
I
V
V
⎯
⎯
⎯
⎯
0.1
0.1
μA
μA
CBO
CB
EB
E
I
= 5 V, I = 0
C
EBO
h
FE
(Note)
(sat)
DC current gain
V
= 6 V, I = 2 mA
120
⎯
700
CE
C
Collector-emitter saturation voltage
Transition frequency
V
I
= 100 mA, I = 10 mA
⎯
80
⎯
0.1
⎯
0.25
⎯
V
CE
f
C
B
V
V
= 10 V, I = 1 mA
MHz
pF
T
CE
CB
C
Collector output capacitance
C
= 10 V, I = 0, f = 1 MHz
2.0
3.5
ob
E
Note: h classification Y (Y): 120~240, GR (G): 200~400, BL (L): 350~700
FE
(
) marking symbol
Marking
1
2007-11-01