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2SC4497-R PDF预览

2SC4497-R

更新时间: 2024-11-08 21:03:35
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管晶体管
页数 文件大小 规格书
5页 238K
描述
TRANSISTOR 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal

2SC4497-R 技术参数

生命周期:Lifetime Buy零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.51
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):30
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):70 MHzBase Number Matches:1

2SC4497-R 数据手册

 浏览型号2SC4497-R的Datasheet PDF文件第2页浏览型号2SC4497-R的Datasheet PDF文件第3页浏览型号2SC4497-R的Datasheet PDF文件第4页浏览型号2SC4497-R的Datasheet PDF文件第5页 
2SC4497  
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)  
2SC4497  
High Voltage Control Applications  
Unit: mm  
High voltage: V  
= 300 V, V  
= 300 V  
CBO  
CEO  
Low saturation voltage: V  
= 0.5 V (max)  
CE (sat)  
Small collector output capacitance: C = 3 pF (typ.)  
ob  
Complementary to 2SA1721  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
300  
300  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
6
V
I
100  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
20  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
200  
C
T
j
150  
JEDEC  
JEITA  
TO-236MOD  
T
stg  
55 to 150  
SC-59  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
2-3F1A  
Weight: 0.012 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Marking  
Start of commercial production  
1988-09  
1
2014-03-01  

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