生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.62 |
最大集电极电流 (IC): | 8 A | 集电极-发射极最大电压: | 120 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 50 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 20 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC4467L-P-T3P-T | UTC |
获取价格 |
Power Bipolar Transistor | |
2SC4467L-X-T3N-T | UTC |
获取价格 |
SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR | |
2SC4467L-X-T3P-T | UTC |
获取价格 |
SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR | |
2SC4467L-Y-T3N-T | UTC |
获取价格 |
Power Bipolar Transistor | |
2SC4467O | SANKEN |
获取价格 |
Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
2SC4467P | SANKEN |
获取价格 |
Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
2SC4467Y | SANKEN |
获取价格 |
Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
2SC4468 | SANKEN |
获取价格 |
Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose) | |
2SC4468 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
2SC4468 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors |