2 S C4 4 6 8
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1695)
Application : Audio and General Purpose
■Absolute maximum ratings
■Electrical Characteristics
External Dimensions MT-100(TO3P)
(Ta=25°C)
(Ta=25°C)
Symbol
2SC4468
Symbol
ICBO
Conditions
2SC4468
Unit
µA
µA
V
Unit
±0.2
4.8
±0.4
15.6
VCBO
VCEO
VEBO
IC
VCB=200V
10max
10max
140min
50min
200
V
±0.1
2.0
9.6
IEBO
VEB=6V
140
V
V(BR)CEO
hFE
IC=50mA
6
V
a
b
±0.1
ø3.2
VCE=4V, IC=3A
IC=5A, IB=0.5A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
10
4
A
IB
VCE(sat)
fT
0.5max
20typ
V
MHz
pF
A
PC
100(Tc=25°C)
150
W
°C
°C
2
Tj
COB
250typ
3
Tstg
+0.2
-0.1
+0.2
-0.1
–55 to +150
1.05
0.65
1.4
hFE Rank O(50 to100), P(70 to140), Y(90 to180)
±0.1
±0.1
5.45
5.45
■Typical Switching Characteristics (Common Emitter)
B
C
E
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
tstg
(µs)
tf
(µs)
ton
(µs)
Weight : Approx 6.0g
a. Type No.
60
12
5
10
–5
0.5
–0.5
4.32typ
0.40typ
0.24typ
b. Lot No.
–
–
–
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=4V)
10
10
8
3
8
6
4
2
0
2
1
6
4
2
0
IC=10A
IB=10mA
5A
0
0
1
2
3
4
0
0.5
1.0
1.5
2.0
0
1
2
Collector-Emitter Voltage VCE(V)
Base Current IB(A)
Base-Emittor Voltage VBE(V)
–
–
–
j-a t Characteristics
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
(VCE=4V)
(VCE=4V)
3
200
300
125˚C
Typ
100
50
1
100
50
25˚C
0.5
–30˚C
20
0.02
20
0.02
0.1
1
10
100
Time t(ms)
1000 2000
0.1
0.5
1
5
10
0.1
0.5
1
5
10
Collector Current IC(A)
Collector Current IC(A)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=12V)
100
30
40
30
20
10
5
Typ
50
1
0.5
10
0
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0
0.1
3
5
10
50
100
200
–0.02
–0.1
–1
Emitter Current IE(A)
–10
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
108