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2SC4187R6A

更新时间： 2024-11-19 23:20:19
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管
页数 文件大小 规格书
6页 45K
描述
TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 5MA I(C) | SOT-323

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中文翻译

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2SC4187R6A 数据手册

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DATA SHEET  
SILICON TRANSISTOR  
2SC4187  
MICROWAVE LOW NOISE AMPLIFIER  
NPN SILICON EPITAXIAL TRANSISTOR  
SUPER MINI MOLD  
DESCRIPTION  
The 2SC4187 is designed primarily for use in low voltage and low  
current application up to UHF band. The 2SC4187 is ideal for pagers,  
electro-optic detector postamplifier applications, and other battery pow-  
ered systems. Super mini mold package makes it suitable for use in small  
type equipments such as HICs.  
PACKAGE DIMENSIONS  
in millimeters  
2.1 ±0.1  
1.25 ±0.1  
FEATURES  
2
•
•
•
Low Noise : NF = 3.0 dB TYP. @VCE = 1 V, I  
High Gain : |S21e|2 = 6.5 dB TYP. @VCE = 1 V, I  
C
= 250 µA, f = 1.0 GHz  
= 1 mA, f = 1.0 GHz  
C
3
1
Small Package  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Marking  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
VCBO  
VCEO  
VEBO  
IC  
PT  
Tj  
15  
8
2
5
50  
V
V
V
mA  
mW  
˚C  
1. Emitter  
2. Base  
3. Collector  
150  
–65 to +150  
Tstg  
˚C  
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)  
Characteristic  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
Symbol  
ICBO  
IEBO  
hFE  
MIN.  
50  
TYP.  
MAX.  
Unit  
µA  
Test Conditions  
VCB = 5 V, IE = 0  
0.1  
0.1  
250  
µA  
VEB = 1 V, IC = 0  
100  
4.0  
0.5  
6.5  
3.0  
VCE = 1 V, IC = 250 µA, pulsed  
VCE = 1 V, IC = 1 mA, f = 1 GHz  
VCB = 1 V, IE = 0, f = 1 MHz  
VCE = 1 V, IE = 1 mA, f = 1 GHz  
Gain Bandwidth Product  
Feedback Capacitance  
Insertion Power Gain  
Noise Figure  
fT  
GHz  
pF  
Cre  
0.7  
4.5  
|S21e|2  
NF  
4.0  
dB  
dB  
V
CE = 1 V, I = 250 µA, f = 1 GHz  
C
hFE Classification  
Class  
Marking  
hFE  
R6A  
R6A  
R6B  
R6C  
R6C  
R6B  
50 to 100  
80 to 160  
125 to 250  
PRECAUTION  
Avoid high static voltages or electric fields so that this device would not suffer any damage due to those voltages or fields.  
Document No. P10370EJ3V0DS00 (3rd edition)  
Date Published February 1996 P  
Printed in Japan  
1996  
©
123456

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