生命周期: | Obsolete | 包装说明: | SUPER MINIMOLD, SC-70, 3 PIN |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.005 A |
集电极-发射极最大电压: | 8 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 50 | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4000 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC4188 | SANYO |
获取价格 |
Transistors for TV Display Video Output Use | |
2SC4188C | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-220AB | |
2SC4188C-CB | ONSEMI |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
2SC4188C-RA | ONSEMI |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
2SC4188C-RC | ONSEMI |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
2SC4188D | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-220AB | |
2SC4188D-RA | ONSEMI |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
2SC4188D-RB | ONSEMI |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
2SC4188E | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-220AB | |
2SC4188E-RC | ONSEMI |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla |