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2SC4161 PDF预览

2SC4161

更新时间: 2024-11-18 05:57:31
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
4页 166K
描述
Silicon NPN Power Transistors

2SC4161 数据手册

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Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC4161  
DESCRIPTION  
·With TO-220F package  
·High breakdown voltage.  
·High reliability.  
·Fast switching speed  
APPLICATIONS  
·Switching regulator applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
Fig.1 simplified outline (TO-220F) and symbol  
3
Absolute maximum ratings (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
V
500  
Open base  
400  
V
Open collector  
7
V
7
A
ICM  
Collector current-peak  
Base current  
14  
A
IB  
3
30  
A
TC=25  
PC  
Collector dissipation  
W
2
Tj  
Junction temperature  
Storage temperature  
150  
Tstg  
-55~150  

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TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | TO-220
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TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | TO-220
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TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | TO-220
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TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-220
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TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-220
2SC4162N ETC

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TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-220