2SC4162

更新时间： 2024-01-02 22:08:43

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	100K
描述
isc Silicon NPN Power Transistor

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中文翻译

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数据手册

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2SC4162 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC4162

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 400V(Min)

·High Switching Speed

·Wide Area of Safe Operation

APPLICATIONS

·Designed for switching regulator and general purpose

applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

500

400

UNIT

Collector Current-Continuous

Collector Current-Peak

I_CM

Collector Power Dissipation

@T_C=25℃

P_C

℃

Junction Temperature

Storage Temperature

150

-55~150

T_J

T_stg

isc Website：www.iscsemi.cn

中文翻译

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与2SC4162相关器件

型号	品牌	获取价格	描述	数据表
2SC4162L	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 10A I(C) \| TO-220
2SC4162M	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 10A I(C) \| TO-220
2SC4162N	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 10A I(C) \| TO-220
2SC4163	SANYO	获取价格	Switching Regulator Applications
2SC4163	ISC	获取价格	Silicon NPN Power Transistors
2SC4163	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SC4163L	ONSEMI	获取价格	TRANSISTOR,BJT,NPN,400V V(BR)CEO,12A I(C),TO-220
2SC4163L	ISC	获取价格	Transistor
2SC4163-L	ONSEMI	获取价格	Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
2SC4163M	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 12A I(C) \| TO-220