Datasheet > 2SC3757Q

2SC3757Q

更新时间： 2024-10-31 23:20:15

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	77K
描述
TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 100MA I(C) \| TO-236

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中文翻译

获取价格

数据手册

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2SC3757Q 数据手册

Transistors

2SC3757

Silicon NPN epitaxial planer type

Unit: mm

+0.10

–0.05

0.40

For high speed switching

+0.10

0.16

–0.06

I Features

• High-speed switching

• Low collector to emitter saturation voltage V_CE(sat)

• Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

(0.95) (0.95)

1.9 0.1

+0.20

2.90

–0.05

10°

• Allowing pair use with 2SA1738

I Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

V_CBO

V_CES

V_EBO

I_CP

Rating

Unit

1: Base

2: Emitter

3: Collector

JEDEC: TO-236

EIAJ: SC-59

Mini Type Package

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

300

Marking Symbol: 2Y

°C

I_C

100

Collector power dissipation

Junction temperature

Storage temperature

P_C

200

T_j

150

T_stg

−55 to +150

°C

I Electrical Characteristics T_a= 25°C 3°C

Parameter

Collector cutoff current

Emitter cutoff current

Forward current transfer ratio ^*

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Symbol

I_CBO

I_EBO

h_FE

Conditions

Min

Typ

Max

0.1

Unit

µA

V_CB= 15 V, I_E= 0

V_EB= 4 V, I_C= 0

0.1

µA

V_CE= 1 V, I_C= 10 mA

I_C= 10 mA, I_B= 1 mA

V_CB= 10 V, I_E= −10 mA, f = 200 MHz

V_CB= 10 V, I_E= 0, f = 1 MHz

200

0.25

1.0

V_CE(sat)

V_BE(sat)

f_T

0.17

450

MHz

Collector output capacitance

Turn-on time

C_ob

t_on

Turn-off time

t_off

Refere to the measurement circuit

Storage time

t_stg

Note) : Rank classification

Rank

h_FE

60 to 120

2YQ

90 to 200

2YR

Marking symbol

12 3

中文翻译

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