Datasheet > 2SC3672-O(TPF2)

2SC3672-O(TPF2)

更新时间： 2024-11-12 15:31:39

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	134K
描述
TRANSISTOR,BJT,NPN,300V V(BR)CEO,100MA I(C),SC-71

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SC3672-O(TPF2) 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	最大集电极电流 (IC)：	0.1 A
配置：	Single	最小直流电流增益 (hFE)：	50
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	1 W	子类别：	Other Transistors
表面贴装：	NO	标称过渡频率 (fT)：	50 MHz
Base Number Matches：	1

2SC3672-O(TPF2) 数据手册

2SC3672

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)

2SC3672

High-Voltage Control Applications

Unit: mm

Plasma Display, Nixie Tube Driver Applications

Cathode Ray Tube Brightness Control Applications

•

High breakdown voltage: V

= 300 V, V

= 300 V

CBO

CEO

Low saturation voltage: V

= 0.5 V (max)

CE (sat)

Small collector output capacitance: C = 3 pF (typ.)

Complementary to 2SA1432.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

300

Collector-emitter voltage

Emitter-base voltage

Collector current

JEDEC

JEITA

―

100

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

1000

150

TOSHIBA

2-7D101A

Weight: 0.2 g (typ.)

stg

−55 to 150

Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-03-10

12 3 4 5 6

中文翻译

下载PDF

与2SC3672-O(TPF2)相关器件

型号	品牌	获取价格	描述	数据表
2SC3672-O(TPF2,F)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,300V V(BR)CEO,100MA I(C),SC-71
2SC3672R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 100MA I(C) \| SC-71
2SC3672-R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7D101A, 3 PIN, BIP General P
2SC3672-R(TPF2)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,300V V(BR)CEO,100MA I(C),SC-71
2SC3673	TOSHIBA	获取价格	NPN EPITAXIAL TYPE (SWITCHING, SOLENOID DRIVE APPLICATIONS)
2SC3673(TPF2)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,40V V(BR)CEO,2A I(C),SC-71
2SC3673_04	TOSHIBA	获取价格	Switching Applications Solenoid Drive Applications
2SC3675	SANYO	获取价格	900V/100mA High-Voltage Amplifier High-Voltage Switching Applications
2SC3676	SANYO	获取价格	High-Voltage Amp, High-Voltage Switching Applications
2SC3678	SAVANTIC	获取价格	Silicon NPN Power Transistors