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2SC3675

更新时间： 2024-11-11 22:52:43
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三洋 - SANYO 晶体开关放大器晶体管局域网
页数 文件大小 规格书
3页 100K
描述
900V/100mA High-Voltage Amplifier High-Voltage Switching Applications

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2SC3675 技术参数

生命周期：Obsolete零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.83Is Samacsys：N
其他特性：HIGH RELIABILITY最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：900 V配置：SINGLE
最小直流电流增益 (hFE)：30JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：NPN
功耗环境最大值：10 W最大功率耗散 (Abs)：10 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：6 MHz
Base Number Matches：1

2SC3675 数据手册

 浏览型号2SC3675的Datasheet PDF文件第2页浏览型号2SC3675的Datasheet PDF文件第3页 
Ordering number:EN1800E  
NPN Triple Diffused Planar Silicon Transistor  
2SC3675  
900V/100mA High-Voltage Amplifier  
High-Voltage Switching Applications  
Applications  
Package Dimensions  
unit:mm  
· High voltage amplifiers.  
· High-voltage switching applications.  
· Dynamic focus applications.  
2010C  
[2SC3675]  
Features  
· High breakdown voltage (V  
min=900V).  
CEO  
· Small Cob (Cob typ=2.8pF).  
· Wide ASO (Adoption of MBIT process).  
· High reliability (Adoption of HVP process).  
1 : Base  
JEDEC : TO-220AB  
2 : Collector  
EIAJ  
: SC46  
3 : Emitter  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
V
Collector-to-Base Voltage  
V
1500  
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
900  
V
CEO  
V
5
100  
V
EBO  
I
mA  
mA  
W
C
Collector Current (Pulse)  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
I
300  
CP  
P
10  
Tc=25˚C  
C
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
10  
Collector Cutoff Current  
I
V
V
V
V
I
=900V, I =0  
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
E
Emitter Cutoff Current  
I
=4V, I =0  
10  
EBO  
C
h
=5V, I =10mA  
C
=10V, I =10mA  
C
=20mA, I =4mA  
B
=20mA, I =4mA  
B
DC Current Gain  
30  
FE  
Gain-Bandwidth Product  
f
6
MHz  
V
T
Collector-to-Emitter Saturation Voltage  
Base-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Emitter-to-Base Breakdown Voltage  
Output Capacitance  
V
V
5
2
CE(sat)  
BE(sat)  
C
I
I
I
V
C
C
C
V
V
V
=1mA, I =0  
E
1500  
900  
5
V
(BR)CBO  
(BR)CEO  
=1mA, R =∞  
V
BE  
I =1mA, I =0  
V
(BR)EBO  
Cob  
E
C
V
=100V, f=1MHz  
2.8  
pF  
CB  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
N2098HA (KT)/80796TS (KOTO) 8-9202/4237AT/3195KI, TS No.1800–1/3  
123

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