Datasheet > 2SC3670-A(TPF2)

2SC3670-A(TPF2)

更新时间： 2024-11-12 20:49:11

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	125K
描述
TRANSISTOR,BJT,NPN,10V V(BR)CEO,2A I(C),SC-71VAR

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中文翻译

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技术参数
数据手册

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2SC3670-A(TPF2) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
最大集电极电流 (IC)：	2 A	配置：	Single
最小直流电流增益 (hFE)：	140	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	1 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

2SC3670-A(TPF2) 数据手册

2SC3670

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC3670

Strobe Flash Applications

Unit: mm

Medium Power Amplifier Applications

•

High DC current gain and excellent h linearity

: h

= 140 to 600 (V

= 1 V, I = 0.5 A)

FE (1)

FE (2)

CE C

: h

= 70 (min), 200 (typ.) (V

= 1 V, I = 2 A)

Low saturation voltage:

= 0.5 V (max)

CE (sat)

(I = 2 A, I = 50 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CES

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

JEDEC

JEITA

―

Collector current

Pulsed

TOSHIBA

2-7D101A

(Note 1)

Weight: 0.2 g (typ.)

Base current

0.5

1000

°C

Collector power dissipation

Junction temperature

150

Storage temperature range

stg

−55 to 150

°C

Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-12-21

12 3 4

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