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2SC3569 PDF预览

2SC3569

更新时间: 2024-11-09 06:20:07
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 216K
描述
Silicon NPN Power Transistors

2SC3569 数据手册

 浏览型号2SC3569的Datasheet PDF文件第2页浏览型号2SC3569的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product SpecificationI  
Silicon NPN Power Transistors  
2SC3569  
DESCRIPTION  
·With TO-220F package  
·Low collector saturation voltage  
APPLICATIONS  
·High speed switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
Fig.1 simplified outline (TO-220F) and symbol  
3
Absolute maximum ratings (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
UNIT  
V
Open emitter  
Open base  
500  
400  
V
Open collector  
7
V
2
A
ICM  
Collector current-peak  
Base current  
4
1
A
IB  
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
15  
W
Tj  
150  
-55~150  
Tstg  

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2SC3569K ETC

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TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2A I(C) | SOT-186VAR
2SC3569-K NEC

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2SC3569L ETC

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TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2A I(C) | SOT-186VAR
2SC3569-L NEC

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Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC3569M ETC

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TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2A I(C) | SOT-186VAR
2SC3569-M NEC

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Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
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2SC3569Y ISC

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2SC3570 ISC

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Silicon NPN Power Transistor
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NPN SILICON POWER TRANSISTOR