2SC3569-M

更新时间： 2024-11-09 12:59:47

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管功率双极晶体管高压
页数	文件大小	规格书
6页	129K
描述
Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin,

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中文翻译

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技术参数
数据手册

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2SC3569-M 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.77	外壳连接：	ISOLATED
最大集电极电流 (IC)：	2 A	集电极-发射极最大电压：	400 V
配置：	SINGLE	最小直流电流增益 (hFE)：	20
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2SC3569-M 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SC3569

NPN SILICON TRIPLE DIFFUSED TRANSISTOR

FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SC3569 is a mold power transistor developed for high-

voltage high-speed switching, and is ideal for use in drivers such as

switching regulators, DC/DC converters, and high-frequency power

amplifiers.

FEATURES

• Mold package that does not require an insulating board or

insulation bushing

• Low collector saturation voltage:

V^CE(sat)= 1.0 V MAX. (@ 0.7 A)

• Fast switching speed:

t^f≤ 1.0 µs MAX. (@ 0.7 A)

• Wide base reverse-bias SOA:

V^CEX(SUS)= 450 V MIN. (@ 0.5 A)

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

Ratings

500

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

Electrode Connection

1. Base

V^CEO

400

2. Collector

V^EBO

7.0

3. Emitter

I^C(DC)

2.0

I^C(pulse)*

I^B(DC)

4.0

1.0

P^T(Tc = 25°C)

P^T(Ta = 25°C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

2.0

150

−55 to +150

T^stg

* PW ≤ 300 µs, duty cycle ≤ 10%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16187EJ1V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

中文翻译

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与2SC3569-M相关器件

型号	品牌	获取价格	描述	数据表
2SC3569R	ISC	获取价格	Transistor
2SC3569Y	ISC	获取价格	暂无描述
2SC3570	ISC	获取价格	Silicon NPN Power Transistor
2SC3570	NEC	获取价格	NPN SILICON POWER TRANSISTOR
2SC3570	RENESAS	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
2SC3570K	ETC	获取价格	BJT
2SC3570-K	NEC	获取价格	暂无描述
2SC3570-K-AZ	RENESAS	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
2SC3570L	ETC	获取价格	BJT
2SC3570-L	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE