Datasheet > 2SC3474(SM)

2SC3474(SM)

更新时间： 2024-02-22 15:15:30

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	200K
描述
TRANSISTOR,BJT,NPN,80V V(BR)CEO,2A I(C),TO-252VAR

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技术参数
数据手册

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2SC3474(SM) 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	最大集电极电流 (IC)：	2 A
配置：	Single	最小直流电流增益 (hFE)：	500
JESD-609代码：	e0	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	20 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

2SC3474(SM) 数据手册

2SC3474

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC3474

Industrial Applications

Switching Applications

Solenoid Drive Applications

Unit: mm

•

High DC current gain: h

= 500 (min) (I = 400 mA)

Low saturation voltage: V

= 0.5 V (max) (I = 300 mA)

CE (sat)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

0.5

Base current

Ta = 25°C

Tc = 25°C

1.0

Collector power

dissipation

Junction temperature

150

°C

JEDEC

JEITA

―

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-7B1A

Weight: 0.36 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

JEDEC

JEITA

―

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)

2006-11-09

12 3 4 5

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