5秒后页面跳转
2SC3480 PDF预览

2SC3480

更新时间: 2024-11-16 07:30:43
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 91K
描述
isc Silicon NPN Power Transistor

2SC3480 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Base Number Matches:1

2SC3480 数据手册

 浏览型号2SC3480的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC3480  
DESCRIPTION  
·High Breakdown Voltage-  
: VCBO= 1500V (Min)  
·High Switching Speed  
·High Reliability  
·Built-in Damper Diode  
APPLICATIONS  
·Designed for high definition CRT display horizontal  
deflection output applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
1500  
800  
UNIT  
V
V
7
V
Collector Current- Continuous  
3.5  
A
Collector Power Dissipation  
@ TC=25℃  
PC  
80  
W
TJ  
Junction Temperature  
150  
Storage Temperature Range  
-55~150  
Tstg  
isc Websitewww.iscsemi.cn  

与2SC3480相关器件

型号 品牌 获取价格 描述 数据表
2SC3481 SANYO

获取价格

NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR
2SC3481 ISC

获取价格

isc Silicon NPN Power Transistor
2SC3482 SANYO

获取价格

NPN Triple Diffused Planar Type Silicon Transistor
2SC3482 ISC

获取价格

Silicon NPN Power Transistor
2SC3483 SANYO

获取价格

NPN Triple Diffused Planar Type Silicon Transistor
2SC3484 SANYO

获取价格

2SC3484
2SC3485 SANYO

获取价格

2SC3485
2SC3486 SANYO

获取价格

SILICON NPN TRANSISTOR
2SC3486 SAVANTIC

获取价格

Silicon NPN Power Transistors
2SC3486 ISC

获取价格

Silicon NPN Power Transistors