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2SC3475 PDF预览

2SC3475

更新时间: 2024-11-16 06:20:35
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管开关局域网
页数 文件大小 规格书
2页 231K
描述
Silicon NPN Power Transistor

2SC3475 数据手册

 浏览型号2SC3475的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC3475  
DESCRIPTION  
·Low Collector Saturation Voltage  
: VCE(sat)= 0.6V(Max)@ IC= 2A  
·High Switching Speed  
APPLICATIONS  
·High speed switching applications.  
·High speed DC-DC converter applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
V
100  
60  
V
7
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
4
A
ICM  
8
A
IB  
1
20  
A
Collector Power Dissipation  
@ TC=25℃  
PC  
W
Collector Power Dissipation  
@ Ta=25℃  
2
TJ  
Junction Temperature  
150  
Storage Temperature Range  
-55~150  
Tstg  
isc Websitewww.iscsemi.cn  

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