Datasheet > 2SC3076_05

2SC3076_05

更新时间： 2024-11-14 07:30:39

品牌	Logo	应用领域
东芝 - TOSHIBA		开关放大器电源开关功率放大器
页数	文件大小	规格书
5页	172K
描述
Power Amplifier Applications Power Switching Applications

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2SC3076_05 数据手册

2SC3076

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC3076

Power Amplifier Applications

Power Switching Applications

Unit: mm

•

Low collector saturation voltage: V = 0.5 V (max) (I = 1 A)

CE (sat) C

Excellent switching time: t

= 1.0 µs (typ.)

stg

Complementary to 2SA1241

Maximum Ratings

(Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CBO

CEO

EBO

Base current

1.0

Ta = 25°C

Tc = 25°C

Collector power

dissipation

JEDEC

JEITA

―

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

TOSHIBA

2-7B1A

Weight: 0.36 g (typ.)

JEDEC

JEITA

―

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)

2005-02-01

12 3 4 5

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与2SC3076_05相关器件

型号	品牌	获取价格	描述	数据表
2SC3076O	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 2A I(C) \| TO-251AA
2SC3076-O	TOSHIBA	获取价格	暂无描述
2SC3076-O(Q)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,50V V(BR)CEO,2A I(C),TO-252VAR
2SC3076O(SM)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,50V V(BR)CEO,2A I(C),TO-252VAR
2SC3076Y	TOSHIBA	获取价格	Power Amplifier Applications Power Switching Applications
2SC3076-Y(2-7J1A)	TOSHIBA	获取价格	TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7J1A, 3 PIN, BIP
2SC3076Y(SM)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,50V V(BR)CEO,2A I(C),TO-252VAR
2SC3077	PANASONIC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3077TMG	PANASONIC	获取价格	暂无描述
2SC3077TSK	PANASONIC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili