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2SC3076O(SM) PDF预览

2SC3076O(SM)

更新时间: 2024-11-14 12:59:55
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管功率放大器
页数 文件大小 规格书
4页 183K
描述
TRANSISTOR,BJT,NPN,50V V(BR)CEO,2A I(C),TO-252VAR

2SC3076O(SM) 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.92最大集电极电流 (IC):2 A
配置:Single最小直流电流增益 (hFE):70
JESD-609代码:e0最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):10 W
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

2SC3076O(SM) 数据手册

 浏览型号2SC3076O(SM)的Datasheet PDF文件第2页浏览型号2SC3076O(SM)的Datasheet PDF文件第3页浏览型号2SC3076O(SM)的Datasheet PDF文件第4页 

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