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2SC3052_11 PDF预览

2SC3052_11

更新时间: 2022-09-17 10:21:25
品牌 Logo 应用领域
SECOS 晶体晶体管
页数 文件大小 规格书
3页 641K
描述
NPN Plastic-Encapsulate Transistor

2SC3052_11 数据手册

 浏览型号2SC3052_11的Datasheet PDF文件第2页浏览型号2SC3052_11的Datasheet PDF文件第3页 
2SC3052  
0.2A , 50V  
NPN Plastic-Encapsulate Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
SOT-23  
FEATURE  
A
Excellent linearity of DC forward current gain.  
Low collector to emitter saturation voltage  
VCE(sat)=0.3V max. (@IC=100mA, IB=10mA)  
L
3
3
Top View  
C B  
1
1
2
2
K
F
E
CLASSIFICATION OF hFE  
Product-Rank 2SC3052-E  
2SC3052-F  
250~500  
LF  
2SC3052-G  
400~800  
LG  
D
Range  
150~300  
LE  
H
J
G
Marking  
Millimeter  
Min. Max.  
Millimeter  
REF.  
REF.  
Min.  
0.09  
0.45  
0.08  
Max.  
A
B
C
D
E
F
2.80  
2.10  
1.20  
0.89  
1.78  
0.30  
3.04  
2.55  
1.40  
1.15  
2.04  
0.50  
G
H
J
K
L
0.18  
0.60  
0.177  
PACKAGE INFORMATION  
0.6 REF.  
Package  
MPQ  
LeaderSize  
7’ inch  
0.89  
1.02  
SOT-23  
3K  
Collector  
3
1
Base  
2
Emitter  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Ratings  
Unit  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
50  
V
V
50  
6
200  
V
Collector Current - Continuous  
Collector Power Dissipation  
Junction, Storage Temperature  
mA  
mW  
°C  
PC  
150  
TJ, TSTG  
125, -55~125  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Min.  
Typ. Max.  
Unit  
Test Conditions  
IC=100µA, IE=0  
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage  
Emitter to Base Breakdown Voltage  
Collector Cut-Off Current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
50  
50  
6
-
-
-
-
-
-
-
-
V
V
IC=100µA, IB=0  
IE=100µA, IC=0  
VCB=50V, IE=0  
VEB=6V, IC=0  
-
V
-
0.1  
0.1  
800  
-
µA  
µA  
Emitter Cut-Off Current  
IEBO  
-
hFE (1)  
hFE (2)  
VCE(sat)  
VBE(sat)  
fT  
150  
50  
-
VCE=6V, IC=1mA  
DC Current Gain  
V
CE=6V, IC=0.1mA  
Collector to Emitter Saturation Voltage  
Base to Emitter Saturation Voltage  
Transition Frequency  
-
-
-
-
0.3  
1
V
V
IC=100mA, IB=10mA  
IC=100mA, IB=10mA  
-
180  
-
-
MHz VCE=6V, IC=10mA  
Collector Output Capacitance  
Cob  
4
pF  
VCE=6V, IE=0, f=1MHz  
VCE=6V, IE= -0.1mA, f=1KHz,  
RG=2KΩ  
Noise Figure  
NF  
-
-
15  
dB  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
18-Feb-2011 Rev. B  
Page 1 of 3  

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