Datasheet > 2SC3052-SOT-23-3L

2SC3052-SOT-23-3L

更新时间： 2022-09-17 10:13:57

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描述
TRANSISTOR (NPN)

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数据手册

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2SC3052-SOT-23-3L 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23-3L Plastic-Encapsulate Transistors

2SC3052

TRANSISTOR (NPN)

SOT-23-3L

1. BASE

FEATURES

2. EMITTER

3. COLLECTOR

Power dissipation

P_CM:

0.15

W (Tamb=25℃)

2. 80¡ À0. 05

1. 60¡ À0. 05

Collector current

I_CM:

0.2

Collector-base voltage

V_(BR)CBO

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=100µA, I_E=0

Ic= 100µA, I_B=0

I_E=100µA, I_C=0

V_CB=50 V , I_E=0

V_EB= 6V , I_C=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

0.1

800

µA

I_EBO

Emitter cut-off current

h_FE(1)

V_CE=6V, I_C=1mA

V_CE=6V, I_C=0.1mA

I_C=100 mA, I_B=10mA

150

DC current gain

h_FE(2)

V_CE(sat)

0.3

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_BE(sat)

I_C=100mA, I_B=10mA

V_CE=6V, I_C= 10mA

180

MHz

Transition frequency

f_T

CLASSIFICATION OF h^FE

(1)

Marking

400-800

Range

150-300

250-500

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