Datasheet > 2SC3052K-E

2SC3052K-E

更新时间： 2024-04-09 18:58:29

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
4页	315K
描述
SOT-23-3L

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中文翻译

获取价格

数据手册

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2SC3052K-E 数据手册

RoHS

COMPLIANT

2SC3052K

NPN Transistor

Features

● Epoxy meets UL-94 V-0 flammability rating

● Halogen free available upon request by adding suffix ”HF”

● Moisture Sensitivity Level 1

● Surface mount package ideally Suited for Automatic

Insertion

● NPN

Mechanical Data

●

ackage: SOT-23-3L

● Terminals: Tin plated leads, solderable per

J-STD-002 and JESD22-B102

● Marking:

2SC3052K-E

2SC3052K-F

2SC3052K-G

Maximum Ratings (Ta=25℃unless otherwise noted)

■

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

Unit

Conditions

Value

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

IC=100μA,IE=0

IC =100uA,IB=0

IE=100μA,IC=0

0.2

Collector

P_C

℃

150

Power Dissipation

Operation Junction Temperature

Storage Temperature

T_j

150

T_stg

-55 to +150

Electrical Characteristics (Ta=25℃unless otherwise noted)

■

Item

Symbol

V_CBO

V_CEO

V_EBO

I_CBO

Unit

Conditions

Min

Type

Max

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector-base cut-off current

Emitter-base cut-off current

IC=100μA,IE=0

IC =100uA,IB=0

IE=100μA,IC=0

_CB=50 V ,IE=0

0.1

V_EB=6 V , IC=0

VCE=6V,IC=1mA

I_EBO

_FE1

150

800

DC current gain

h_FE2

VCE=6V,IC=0.1mA

IC=100mA,IB=10mA

VCE= 6V, IC=10mA

V_CB=6V ,IE=0, f=1MHz

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)*

f_T

0.3

MHz

180

Collector-base output capacitance

Cob

1 / 4

S-S5520

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.0,30-Oct-23

12 3 4

中文翻译

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与2SC3052K-E相关器件

型号	品牌	获取价格	描述	数据表
2SC3052K-F	YANGJIE	获取价格	SOT-23-3L
2SC3052K-G	YANGJIE	获取价格	SOT-23-3L
2SC3052-SOT-23	CJ	获取价格	TRANSISTOR (NPN)
2SC3052-SOT-23-3L	CJ	获取价格	TRANSISTOR (NPN)
2SC3052-T12-1E	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
2SC3052-T12-1F	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
2SC3052-T12-1G	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
2SC3053	ISAHAYA	获取价格	FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYP
2SC3053	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 25V V(BR)CEO, NPN, Silicon, SC-59, 3 PIN
2SC3053_10	ISAHAYA	获取价格	FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYP