Datasheet > 2SC3052-SOT-23

2SC3052-SOT-23

更新时间： 2024-11-11 07:30:39

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体晶体管
页数	文件大小	规格书
1页	80K
描述
TRANSISTOR (NPN)

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中文翻译

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数据手册

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2SC3052-SOT-23 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

1. BASE

2SC3052 TRANSISTOR (NPN)

2. EMITTER

3. COLLECTOR

FEATURES

Power dissipation

P_CM:

2. 4

1. 3

0.15

W (Tamb=25℃)

Collector current

I_CM:

0.2

Collector-base voltage

V _{(BR) CBO}

Unit: mm

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V _{(BR) CBO}

V _{(BR) CEO}

V _{(BR) EBO}

I_CBO

Test conditions

I_C= 100 µA, I_E=0

I_C= 100 µA, I_B=0

I_E= 100 µA, I_C=0

V_CB= 50 V , I_E=0

MIN

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

0.1

800

µA

Emitter cut-off current

I_EBO

V_EB= 6V , I_C=0

h_FE(1)

V_CE= 6V, I_C= 1mA

V_CE= 6V, I_C= 0.1mA

I_C=100mA, I_B= 10mA

150

DC current gain

h_FE(2)

Collector-emitter saturation voltage

V_CE(sat)

V_BE(sat)

0.3

Base-emitter saturation voltage

Transition frequency

I_C= 100mA, I_B= 10mA

V_CE= 6V, I_C= 10mA

180

MHz

f_T

Collector output capacitance

Noise figure

V_CE=6V, I_E=0, f=1MHz

C_ob

V_CE=6V,I_E=-0.1mA, f=1KHz, R_G=2KΩ

CLASSIFICATION OF h_FE(1)

Rank

150~300

250~500

Range

Marking

400~800

中文翻译

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