Datasheet > 2SC304Q

2SC304Q

更新时间： 2023-12-06 20:03:31

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	289K
描述
功率三极管

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC304Q 数据手册

2SC304Q-HAF

Characteristics at T_a= 25℃

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at V_CE= 2 V, I_C= 500 mA

at V_CE= 2 V, I_C= 1 A

at V_CE= 2 V, I_C= 2 A

at V_CE= 2 V, I_C= 4 A

at V_CE= 2 V, I_C= 6 A

h_FE

300

250

150

Collector Base Breakdown Voltage

at I_C= 100 µA

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Collector Emitter Breakdown Voltage

at I_C= 10 mA

Emitter Base Breakdown Voltage

at I_E= 100 µA

Collector Base Cutoff Current

at V_CB= 60 V

100

Emitter Base Cutoff Current

at V_EB= 5 V

I_EBO

Collector Emitter Saturation Voltage

at I_C= 1 A, I_B= 50 mA

at I_C= 5.2 A, I_B= 260 mA

V_CE(sat)

280

Base Emitter Saturation Voltage

at I_C= 1 A, I_B= 100 mA

at I_C= 4 A, I_B= 400 mA

V_BE(sat)

0.9

1.2

Base Emitter Turn-on Voltage

at V_CE= 2 V, I_C= 2 A

V_BE(on)

f_T

0.85

Transition Frequency

at V_CE= 10 V, I_C= 100 mA, f = 100 MHz

130

MHz

Output Capacitance

at V_CB= 10 V, f = 1 MHz

C_ob

2 / 5

Dated: 09/12/2022 Rev: 01

123 4 5

下载PDF

与2SC304Q相关器件

型号	品牌	描述	获取价格	数据表
2SC3051	ETC	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 800MA I(C) \| TO-126	获取价格
2SC3052	ISAHAYA	LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE	获取价格
2SC3052	JCST	TRANSISTOR (NPN)	获取价格
2SC3052	HTSEMI	TRANSISTOR (NPN)	获取价格
2SC3052	SECOS	NPN Silicon Plastic-Encapsulate Transistor	获取价格
2SC3052	KEXIN	NPN Transistor	获取价格