生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.28 | 最大集电极电流 (IC): | 0.05 A |
基于收集器的最大容量: | 1.5 pF | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 150 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 1200 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC2735_15 | WINNERJOIN |
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TRANSISTOR (NPN) | |
2SC2735JC | HITACHI |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN | |
2SC2735JC01 | HITACHI |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC2735JCTL | HITACHI |
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UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MPAK-3 | |
2SC2735JCTR | HITACHI |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC2735JCUL | RENESAS |
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暂无描述 | |
2SC2735JCUR | HITACHI |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC2735JCUR | RENESAS |
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UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MPAK-3 | |
2SC2735JTL-E | RENESAS |
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Silicon NPN Epitaxial | |
2SC2736 | KEXIN |
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Silicon NPN Epitaxial |