是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | MPAK |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | Factory Lead Time: | 1 week |
风险等级: | 5.79 | 最大集电极电流 (IC): | 0.05 A |
基于收集器的最大容量: | 1.5 pF | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 1200 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC2735JTL-E | RENESAS |
获取价格 |
Silicon NPN Epitaxial | |
2SC2736 | KEXIN |
获取价格 |
Silicon NPN Epitaxial | |
2SC2736 | ISC |
获取价格 |
isc Silicon NPN RF Transistor | |
2SC2736 | HITACHI |
获取价格 |
Silicon NPN Epitaxial | |
2SC2736 | TYSEMI |
获取价格 |
Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V | |
2SC2736 | FOSHAN |
获取价格 |
SOT-23 | |
2SC2736TC | HITACHI |
获取价格 |
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN | |
2SC2736TC01 | RENESAS |
获取价格 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MPAK-3 | |
2SC2736TCTL | HITACHI |
获取价格 |
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC2736TCTR | HITACHI |
获取价格 |
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili |