Datasheet > 2SC2735

2SC2735

更新时间： 2024-11-02 06:22:07

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描述
Silicon NPN Epitaxial

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中文翻译

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数据手册

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2SC2735 数据手册

SMD Type

TransistIoCrs

Silicon NPN Epitaxial

2SC2735

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector current

Collector power dissipation

Junction temperature

Storage temperature

P^C

150

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

V^(BR)CBOIC = 10ìA , IE = 0

V^(BR)CEO

IC = 1mA , RBE =

V^(BR)EBOIE = 10ìA , IC = 0

I^CBOVCB = 10V, IC = 0

V^CE(sat)IC = 10 mA, IB = 5 mA

0.5

1.0

ìA

Collector to emitter saturation voltage

DC current transfer ratio

h^FE

C^ob

VCE = 10 V, IC = 5 mA

Collector output capacitance

VCB = 10 V, IE = 0, f = 1 MHz

0.85

1.5

V^CC= 6 V, IC = 2 mA,f = 900 MHz,

fosc = 930 MHz (0dBm) ,f = 30 MHz

Gain bandwidth product

Oscillating output voltage

600 1200

MHz

V^OSC1VCC = 6 V, IC = 5 mA, f = 930 MHz

210

130

V^OSC2VCC = 12 V, IC = 7 mA, fOSC = 930 MHz

V^CC= 12 V, IC = 2 mA,f = 200 MHz, fOSC

Conversion gain

Noise figure

= 230 MHz (0dBm)

V^CC= 12 V, IC = 2 mA, f = 200 MHz,

6.5

f^OSC= 230 MHz (0dBm)

Marking

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