5秒后页面跳转
2SC2654-L PDF预览

2SC2654-L

更新时间: 2024-10-29 06:06:11
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
6页 244K
描述
7A, 40V, NPN, Si, POWER TRANSISTOR, TO-220AB, SC-46, 3 PIN

2SC2654-L 数据手册

 浏览型号2SC2654-L的Datasheet PDF文件第1页浏览型号2SC2654-L的Datasheet PDF文件第2页浏览型号2SC2654-L的Datasheet PDF文件第4页浏览型号2SC2654-L的Datasheet PDF文件第5页浏览型号2SC2654-L的Datasheet PDF文件第6页 
DATA SHEET  
SILICON POWER TRANSISTOR  
2SC2654  
NPN SILICON EPITAXIAL TRANSISTOR  
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING  
FEATURES  
PACKAGE DRAWING (UNIT: mm)  
• Large current capacitance in small dimension: IC(DC) = 7 A  
• Low collector saturation voltage:  
VCE(sat) = 0.3 V MAX. (IC = 3.0 A)  
• Ideal for use in a lamp driver  
• Complementary transistor: 2SA1129  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Symbol  
VCBO  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
Base current (DC)  
100  
VCEO  
40  
V
VEBO  
7.0  
V
IC(DC)  
7.0  
A
Electrode Connection  
IC(pulse)*  
IB(DC)  
15  
3.5  
A
A
PT (Tc = 25°C)  
PT (Ta = 25°C)  
Tj  
Total power dissipation  
Total power dissipation  
Junction temperature  
Storage temperature  
40  
W
W
°C  
°C  
1.5  
150  
55 to +150  
Tstg  
* PW 300 µs, duty cycle 10%  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
Parameter  
Collector cutoff current  
Emitter cutoff current  
DC current gain  
Symbol  
ICBO  
Conditions  
VCB = 40 V, IE = 0  
MIN.  
TYP.  
MAX.  
10  
Unit  
µA  
µA  
IEBO  
VEB = 5.0 V, IC = 0  
10  
hFE1  
VCE = 1.0 V, IC = 3 A*  
VCE = 1.0 V, IC = 5 A*  
IC = 3.0 A, IB = 0.1 A*  
IC = 3.0 A, IB = 0.1 A*  
IC = 5.0 A, IB = 0.5 A*  
IC = 5.0 A, IB = 0.5 A*  
40  
20  
320  
DC current gain  
hFE2  
Collector saturation voltage  
Base saturation voltage  
Collector saturation voltage  
Base saturation voltage  
Turn-on time  
VCE(sat)1  
VBE(sat)1  
VCE(sat)2  
VBE(sat)2  
ton  
0.3  
1.5  
0.6  
2.0  
1.0  
2.5  
1.0  
V
V
V
V
IC = 5.0 A, IB1 = IB2 = 0.5 A  
RL = 4.0 , VCC 20 V  
PW 50 µs, duty cycle 2 %  
µs  
µs  
µs  
Storage time  
tstg  
Fall time  
tf  
* Pulse test PW 350 µs, duty cycle 2%  
hFE1 classification M: 40 to 80, L: 60 to 120, K: 100 to 200, J: 160 to 320  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16134EJ1V0DS00  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

与2SC2654-L相关器件

型号 品牌 获取价格 描述 数据表
2SC2654L-AZ RENESAS

获取价格

2SC2654L-AZ
2SC2654M ISC

获取价格

Transistor
2SC2655 WINNERJOIN

获取价格

TRANSISTOR (NPN)
2SC2655 SECOS

获取价格

NPN Plastic Encapsulated Transistor
2SC2655 WEITRON

获取价格

NPN General Purpose Transistors
2SC2655 UTC

获取价格

Silicon NPN Epitaxial Type (PCT Process)
2SC2655 TOSHIBA

获取价格

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)
2SC2655 LGE

获取价格

暂无描述
2SC2655 CJ

获取价格

Transistor
2SC2655 SWST

获取价格

小信号晶体管