Datasheet > 2SC2654-L

2SC2654-L

更新时间： 2024-01-15 14:49:39

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
6页	244K
描述
7A, 40V, NPN, Si, POWER TRANSISTOR, TO-220AB, SC-46, 3 PIN

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2SC2654-L 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SC2654

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

FEATURES

PACKAGE DRAWING (UNIT: mm)

• Large current capacitance in small dimension: I^C(DC)= 7 A

• Low collector saturation voltage:

V^CE(sat)= 0.3 V MAX. (I^C= 3.0 A)

• Ideal for use in a lamp driver

• Complementary transistor: 2SA1129

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

100

V^CEO

V^EBO

7.0

I^C(DC)

7.0

Electrode Connection

I^C(pulse)*

I^B(DC)

3.5

P^T(T^c= 25°C)

P^T(T^a= 25°C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

1.5

150

−55 to +150

T^stg

* PW ≤ 300 µs, duty cycle ≤ 10%

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= 40 V, I^E= 0

MIN.

TYP.

MAX.

Unit

µA

I^EBO

V^EB= 5.0 V, I^C= 0

h^FE1

V^CE= 1.0 V, I^C= 3 A*

V^CE= 1.0 V, I^C= 5 A*

I^C= 3.0 A, I^B= 0.1 A*

I^C= 5.0 A, I^B= 0.5 A*

320

DC current gain

h^FE2

Collector saturation voltage

Base saturation voltage

Collector saturation voltage

Base saturation voltage

Turn-on time

V^CE(sat)1

V^BE(sat)1

V^CE(sat)2

V^BE(sat)2

t^on

0.3

1.5

0.6

2.0

1.0

2.5

1.0

I^C= 5.0 A, I^B1= −I^B2= 0.5 A

R^L= 4.0 Ω, V^CC≅ 20 V

PW ≅ 50 µs, duty cycle ≤ 2 %

µs

Storage time

t^stg

Fall time

t^f

* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%

h^FE1classification M: 40 to 80, L: 60 to 120, K: 100 to 200, J: 160 to 320

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16134EJ1V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

1 234 5 6

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