Datasheet > 2SC2625

2SC2625

更新时间： 2024-09-30 12:49:27

品牌	Logo	应用领域
THINKISEMI		晶体晶体管开关局域网
页数	文件大小	规格书
2页	437K
描述
80 Watt NPN Type Epitaxial Silicon Power Transistor

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中文翻译

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2SC2625 数据手册

2SC2625

Pb Free Plating Product

Features

80 WATT NPN EPITAXIAL SILICON TRANSISTOR

2SC2625

High voltage,High speed switching

High reliability

Collector

Base

Applications

Switching regulators

Ultrasonic generators

High frequency inverters

General purpose power amplifiers

Emitter

Fig.1 simplified outline (TO-3PB) and symbol

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless otherwise specified)

Item

Symbol

VCBO

Ratings

450

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

VCEO

400

VCEO(SUS)

VEBO

Base current

°C

Collector power disspation

Operating junction temperature

Storage temperature

+150

-55 to +150

Tstg

Electrical characteristics (Tc =25°C unless otherwise specified)

Min.

Typ.

Max. Units

Symbol

VCBO

VCEO

VCEO(SUS)

VEBO

ICBO

Item

Test Conditions

ICBO = 1mA

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector-Base leakage current

Emitter-Base leakage current

D.C. current gain

450

400

ICEO = 10mA

IC = 1A

IEBO = 0.1mA

VCBO = 450V

VEBO = 7V

1.0

0.1

IEBO

hFE

IC = 4A, VCE = 5V

IC = 4A, IB = 0.8A

VCE(Sat)

VBE(Sat)

ton

1.2

1.5

1.0

2.0

1.0

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

µs

IC = 7.5A, IB1 = -IB2 = 1.5A

tstg

Switching time

RL = 20 ohm ,Pw = 20 s Duty=<2%

Thermal characteristics

Min.

Typ.

Max. Units

Item

Symbol

Rth(j-c)

Test Conditions

Junction to case

Thermal resistance

1.55

°C/W

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