Datasheet > 2SC2590R

2SC2590R

更新时间： 2024-11-17 23:20:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器局域网
页数	文件大小	规格书
3页	63K
描述
TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 500MA I(C) \| TO-126

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中文翻译

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数据手册

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2SC2590R 数据手册

Power Transistors

2SC2590

Silicon NPN epitaxial planar type

Unit: mm

+0.5

–0.1

For low-frequency power amplification

Complementary to 2SA1110

8.0

3.2 0.2

φ 3.16 0.1

I Features

•

Excellent current I_Ccharacteristics of forward current transfer ratio

_FEvs. collector

•

High transition frequency f_T

A complementary pair with 2SA1110, is optimum for the driver-

stage of a 40 W to 60 W output amplifier

TO-126B package which requires no insulation plate for installa-

tion to the heat sink

•

0.75 0.1

4.6 0.2

0.5 0.1

2.3 0.2

0.5 0.1

1.76 0.1

1 : Emitter

2 : Collector

3 : Base

I Absolute Maximum Ratings T_C= 25°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

TO-126B Package

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

120

0.5

I_C

Collector power dissipation ^*

Junction temperature

Storage temperature

P_C

1.2

°C

T_j

150

T_stg

−55 to +150

Note) : Without heat sink

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

V_CEO

Conditions

Min

120

Typ

Max

Unit

Collector to emitter voltage

Emitter to base voltage

I_C= 100 µA, I_B= 0

V_EBO

I_E= 10 µA, I_C= 0

Forward current transfer ratio

h_FE1

V_CE= 10 V, I_C= 150 mA

V_CE= 5 V, I_C= 500 mA

I_C= 300 mA, I_B= 30 mA

220

h_FE2

V_CE(sat)

V_BE(sat)

f_T

100

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

1.2

V_CB= 10 V, I_E= −50 mA, f = 200 MHz

200

MHz

Collector output capacitance

C_ob

V_CB= 10 V, I_E= 0, f = 1 MHz

Note) : Rank classification

Rank

h_FE1

90 to 155

130 to 220

12 3

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