Datasheet > 2SC2502

2SC2502

更新时间： 2024-11-19 06:26:47

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	99K
描述
Silicon NPN Power Transistors

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中文翻译

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2SC2502 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC2502

DESCRIPTION

·With TO-220C package

·High breakdown voltage

·High speed switching time

APPLICATIONS

·For use in high-voltage,high-speed ,power

switching in inductive circuit.

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

UNIT

500

ꢀ

Open base

400

Open collector

I_CM

Collector current-peak

Base current

I_B

P_C

Collector dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

T_j

150

-55~150

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-C}

Thermal resistance junction case

2.5

ꢀ/W

12 3

中文翻译

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2SC2510A	TOSHIBA	获取价格	SILICON NPN EPITAXIAL PLANAR TYPE
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2SC2512RF	HITACHI	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic
2SC2512RR	HITACHI	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic
2SC2512TZ	HITACHI	获取价格	暂无描述