Datasheet > 2SC2507

2SC2507

更新时间： 2024-02-23 07:41:18

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	68K
描述
isc Silicon NPN Power Transistor

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SC2507 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

2SC2507 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC2507

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 400V(Min)

·Fast Switching Speed

·Collector-Emitter Saturation Voltage-

: V_CE(sat)= 0.7V(Max.)@ I_C= 10A

APPLICATIONS

·Designed for use in high-voltage, high-speed , power

switching in inductive circuit , they are particularly suited

for 115 and 220V switchmode applications such as swit-

ching regulator’s, inverters.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

500

400

UNIT

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Base Current-Peak

I_CM

I_B

I_BM

Collector Power Dissipation

@ T_C=25℃

P_C

200

150

-55~150

℃

T_J

Junction Temperature

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

0.625 ℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

下载PDF

与2SC2507相关器件

型号	品牌	描述	获取价格	数据表
2SC2508	ETC	TRANSISTOR \| BJT \| NPN \| 18V V(BR)CEO \| 6A I(C) \| SOT-123VAR	获取价格
2SC2509	TOSHIBA	SILICON NPN EPITAXIAL PLANAR TYPE	获取价格
2SC2510	TOSHIBA	TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28v SUPPLY VOLTAGE USE)	获取价格
2SC2510A	TOSHIBA	SILICON NPN EPITAXIAL PLANAR TYPE	获取价格
2SC2512	HITACHI	Silicon NPN Triple Diffused	获取价格
2SC2512RF	HITACHI	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic	获取价格