2SC2351

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器晶体管
页数	文件大小	规格书
4页	32K
描述
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

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中文翻译

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2SC2351 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC2351

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

MINI MOLD

FEATURES

•

1.5 dB TYP.

14 dB TYP.

@ f = 1.0 GHz

PACKAGE DIMENSIONS

(Units: mm)

MAG

2.8±0.2

1.5

+0.1

−0.15

0.65

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

3.0

°C

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

250

T^j

150

Marking

T^stg

−65 to +150

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

ELECTRICAL CHARACTERISTICS (T^A= 25 °C)

CHARACTERISTIC

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

SYMBOL

MIN.

TYP.

MAX.

UNIT

µA

TEST CONDITIONS

I^CBO

0.1

200

V^CB= 15 V, I^E= 0

µA

I^EBO

V^EB= 2.0 V, I^C= 0

h^FE

V^CE= 10 V, I^C= 20 mA

V^CB= 10 V, I^E= 0, f = 1.0 MHz

Gain Bandwidth Product

Output Capacitance

Insertion Power Gain

Noise Figure

f^T

4.5

0.75

GHz

C^ob

1.0

3.0

S²¹e

V^CE= 10 V, I^C= 20 mA, f = 1.0 GHz

V^CE= 10 V, I^C= 5 mA, f = 1.0 GHz

V^CE= 10 V, I^C= 20 mA, f = 1.0 GHz

1.5

Maximum Available Gain

MAG

h^FEClassification

Class

Marking

h^FE

E/P *

F/Q *

40 to 120

100 to 200

* Old Specification / New Specification

Document No. P10350EJ3V1DS00 (3rd edition)

Date Published March 1997 N

Printed in Japan

1984

12 3 4

中文翻译

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2SC2351 替代型号

型号	品牌	替代类型	描述	数据表
PMBTH10	NXP	功能相似	NPN 1 GHz general purpose switching transistor
BFR53	NXP	功能相似	NPN 2 GHz wideband transistor
BFR181	INFINEON	功能相似	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector curr

与2SC2351相关器件

型号	品牌	获取价格	描述	数据表
2SC2351-E	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 70MA I(C) \| SOT-346
2SC2351F	ISC	获取价格	Transistor
2SC2351-F	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 70MA I(C) \| SOT-346
2SC2351-L	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC2351-P	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 70MA I(C) \| SOT-346
2SC2351Q	ISC	获取价格	暂无描述
2SC2351-Q	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 70MA I(C) \| SOT-346
2SC2351R2	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC2351R3	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC2351-T1B	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Sili