Datasheet > 2SC2344_2014

2SC2344_2014

更新时间： 2024-02-20 00:00:31

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
5页	214K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2SC2344_2014 数据手册

JMnic

Product Specification

Silicon NPN Power Transistors

2SC2344

DESCRIPTION

·With TO-220 package

·Complement to type 2SA1011

APPLICATIONS

·High voltage switching

·Audio frequency power amplifier;

·100W output predriver applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-220) and symbol

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

180

UNIT

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

160

Open collector

1.5

I_CM

Collector current-Peak

Total power dissipation

Junction temperature

Storage temperature

3.0

P_T

T_C=25℃

℃

T_j

150

T_stg

-55~150

12 3 4 5

中文翻译

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与2SC2344_2014相关器件

型号	品牌	获取价格	描述	数据表
2SC2344D	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 1.5A I(C) \| TO-220AB
2SC2344E	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 1.5A I(C) \| TO-220AB
2SC2344P	SANYO	获取价格	High-Voltage Switching, AF Power Amp,100W Output Predriver Applications
2SC2347	TOSHIBA	获取价格	TRANSISTOR (TV UHF OSCILLATOR, TV VHF MIXER APPLICATIONS)
2SC2347_03	TOSHIBA	获取价格	Silicon NPN Epitaxial Planar Type
2SC2348	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 20MA I(C) \| TO-92
2SC2349	TOSHIBA	获取价格	TRANSISTOR (TV VHF OSCILLATOR APPLICATIONS)
2SC2350	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC2351	ISC	获取价格	isc Silicon NPN RF Transistor
2SC2351	NEC	获取价格	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD