5秒后页面跳转
2SC2347_03 PDF预览

2SC2347_03

更新时间: 2024-09-24 04:25:55
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
4页 147K
描述
Silicon NPN Epitaxial Planar Type

2SC2347_03 数据手册

 浏览型号2SC2347_03的Datasheet PDF文件第2页浏览型号2SC2347_03的Datasheet PDF文件第3页浏览型号2SC2347_03的Datasheet PDF文件第4页 
                                                        
                                                        
                                                                     
                                                                     
2SC2347  
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type  
2SC2347  
TV UHF Oscillator Applications  
Unit: mm  
TV VHF Mixer Applications  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
30  
15  
V
V
CBO  
CEO  
EBO  
3
V
I
50  
mA  
mA  
mW  
°C  
°C  
C
Emitter current  
I
-50  
250  
125  
-55~125  
E
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
T
j
T
stg  
JEDEC  
JEITA  
TO-92  
SC-43  
TOSHIBA  
2-5F1B  
Weight: 0.21 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
= 15 V, I = 0  
¾
¾
¾
¾
¾
¾
¾
1.2  
¾
0.1  
1.0  
¾
mA  
mA  
V
CBO  
CB  
EB  
E
I
= 3 V, I = 0  
C
EBO  
(BR) CEO  
Collector-emitter breakdown voltage  
DC current gain  
V
I
= 1 mA, I = 0  
15  
20  
650  
¾
C
B
h
V
V
V
V
= 3 V, I = 8 mA  
¾
FE  
CE  
CE  
CB  
CB  
C
Transition frequency  
f
= 10 V, I = 8 mA  
¾
MHz  
pF  
T
C
Collector output capacitance  
Collector-base time constant  
C
= 10 V, I = 0, f = 1 MHz  
1.5  
12  
ob  
E
C
c
rbb’  
= 10 V, I = 8 mA, f = 30 MHz  
¾
ps  
C
1
2003-03-19  

与2SC2347_03相关器件

型号 品牌 获取价格 描述 数据表
2SC2348 ETC

获取价格

TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20MA I(C) | TO-92
2SC2349 TOSHIBA

获取价格

TRANSISTOR (TV VHF OSCILLATOR APPLICATIONS)
2SC2350 NEC

获取价格

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC2351 ISC

获取价格

isc Silicon NPN RF Transistor
2SC2351 NEC

获取价格

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
2SC2351-E NEC

获取价格

TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-346
2SC2351F ISC

获取价格

Transistor
2SC2351-F NEC

获取价格

TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-346
2SC2351-L NEC

获取价格

RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC2351-P NEC

获取价格

TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-346