Datasheet > 2SC2295B

2SC2295B

更新时间： 2024-10-01 23:20:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
4页	64K
描述
TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 30MA I(C) \| TO-236

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中文翻译

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数据手册

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2SC2295B 数据手册

Transistor

2SC2295

Silicon NPN epitaxial planer type

For high-frequency amplification

Complementary to 2SA1022

Unit: mm

2.8 ⁺^–0⁰^.^.³²

1.5 ⁺^–0⁰^.^.⁰²⁵⁵

0.65±0.15

Features

0.65±0.15

■

●

Optimum for RF amplification of FM/AM radios.

●

High transition frequency f_T.

●

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

■

0.1 to 0.3

Parameter

Symbol

V_CBO

V_CEO

C_EBO

I_C

Ratings

Unit

0.4±0.2

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

1:Base

JEDEC:TO–236

EIAJ:SC–59

Mini Type Package

2:Emitter

3:Collector

˚C

Collector power dissipation

Junction temperature

Storage temperature

P_C

200

T_j

150

Marking symbol : V

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

0.1

Unit

Collector cutoff current

Forward current transfer ratio

Transition frequency

Noise figure

V_CB= 10V, I_E= 0

µA

h_FE

f_T

V_CB= 10V, I_E= –1mA

220

V_CB= 10V, I_E= –1mA, f = 200MHz

150

250

2.8

MHz

Ω

Z_rb

_CB= 10V, I_E= –1mA, f = 5MHz

Reverse transfer impedance

V_CB= 10V, I_E= –1mA, f = 2MHz

V_CE= 10V, I_C= 1mA, f = 10.7MHz

1.5

Common emitter reverse transfer capacitance C_re

0.9

^*h_FERank classification

Rank

h_FE

70 ~ 140

110 ~ 220

Marking Symbol

12 3 4

中文翻译

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