SMD Type
Transistors
NPN Transistors
2SC2295
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
● High transition frequency fT.
● Complementary to 2SA1022
1
2
+0.1
-0.1
+0.05
-0.01
0.95
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
30
Unit
V
VCBO
VCEO
VEBO
20
5
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
I
C
30
mA
P
C
200
150
mW
T
J
℃
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= 100 μA, I = 0
Ic= 1 mA, I = 0
= 100μA, I
Min
30
20
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
= 0
I
CBO
EBO
V
V
CB= 30 V , I
EB= 5V , I
E
= 0
100
100
0.2
1.2
220
4
nA
V
I
C
=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=-10 mA, I
B
=1mA
=1mA
V
C=-10 mA, I
B
hFE
V
V
V
V
V
CE= -10V, I
C
= -1mA
70
Noise figure
NF
CB = 10V, I
CB = 10V, I
E
= –1mA, f= 5MHz
= –1mA, f= 2MHz
2.8
22
dB
Ω
Reverse transfer impedance
Common emitter reverse transfer capacitance
Transition frequency
Z
rd
re
E
50
C
CE= 10V, I
CB= 10V, I
C
= 1mA,f=10.7MHz
1.5
pF
f
T
E
= -1mA,f=200MHz
150
250
MHz
■ Classification of hfe
Type
Range
Marking
2SC2295-B
70-140
VB
2SC2295-C
110-220
VC
1
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