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2SC2295TSK PDF预览

2SC2295TSK

更新时间: 2024-09-23 13:04:15
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 54K
描述
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon

2SC2295TSK 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
最大集电极电流 (IC):0.03 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

2SC2295TSK 数据手册

 浏览型号2SC2295TSK的Datasheet PDF文件第2页浏览型号2SC2295TSK的Datasheet PDF文件第3页 
Transistor  
2SC2295  
Silicon NPN epitaxial planer type  
For high-frequency amplification  
Complementary to 2SA1022  
Unit: mm  
2.8 +00..32  
1.5 +00..0255  
0.65±0.15  
Features  
0.65±0.15  
Optimum for RF amplification of FM/AM radios.  
High transition frequency fT.  
1
2
Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
3
Absolute Maximum Ratings (Ta=25˚C)  
0.1 to 0.3  
Parameter  
Symbol  
VCBO  
VCEO  
CEBO  
IC  
Ratings  
Unit  
V
0.4±0.2  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
30  
20  
V
5
30  
V
1:Base  
JEDEC:TO–236  
EIAJ:SC–59  
Mini Type Package  
2:Emitter  
3:Collector  
mA  
mW  
˚C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
200  
Tj  
150  
Marking symbol : V  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
0.1  
Unit  
Collector cutoff current  
Forward current transfer ratio  
Transition frequency  
Noise figure  
VCB = 10V, IE = 0  
µA  
*
hFE  
fT  
VCB = 10V, IE = –1mA  
70  
220  
VCB = 10V, IE = –1mA, f = 200MHz  
150  
250  
2.8  
22  
MHz  
dB  
NF  
Zrb  
V
CB = 10V, IE = –1mA, f = 5MHz  
4
Reverse transfer impedance  
VCB = 10V, IE = –1mA, f = 2MHz  
VCE = 10V, IC = 1mA, f = 10.7MHz  
50  
1.5  
Common emitter reverse transfer capacitance Cre  
0.9  
pF  
*hFE Rank classification  
Rank  
hFE  
B
C
70 ~ 140  
VB  
110 ~ 220  
VC  
Marking Symbol  
1

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