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2SC1815LT1 PDF预览

2SC1815LT1

更新时间: 2024-11-10 07:30:27
品牌 Logo 应用领域
TGS 晶体晶体管
页数 文件大小 规格书
2页 148K
描述
SOT-23 Plastic-Encapsulate Transistors (NPN)

2SC1815LT1 数据手册

 浏览型号2SC1815LT1的Datasheet PDF文件第2页 
TIGER ELECTRONIC CO.,LTD  
SOT-23 Plastic-Encapsulate Transistors  
SOT-23  
2SC1815LT1 TRANSISTOR (NPN)  
FEATURES  
Power dissipation  
1. BASE  
2. EMITTER  
3. COLLECTOR  
MARKING : C1815=HF  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
Parameter  
Value  
Units  
V
VCBO  
VCEO  
VEBO  
IC  
60  
50  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
5
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
150  
200  
150  
-55-150  
mA  
mW  
PC  
Tj  
Tstg  
Storage Temperature  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
ICBO  
Test conditions  
IC= 100uA, IE=0  
IC= 0.1mA, IB=0  
VCB=60V, IE=0  
MIN  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Collector cut-off current  
60  
50  
V
0.1  
0.1  
0.1  
400  
0.25  
1
uA  
uA  
uA  
Collector cut-off current  
ICEO  
VCE=50V, IB=0  
Emitter cut-off current  
IEBO  
VEB= 5V, IC=0  
DC current gain  
hFE  
VCE= 6V, IC= 2mA  
IC=100mA, IB= 10mA  
IC=100mA, IB= 10mA  
130  
80  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
V
V
V
CE=10V, IC= 1mA,  
Transition frequency  
fT  
MHz  
f=30MHz  
CLASSIFICATION OF hFE  
Rank  
L
H
Range  
130-200  
200-400  

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