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2SC1815-O PDF预览

2SC1815-O

更新时间: 2024-09-26 07:30:27
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
3页 378K
描述
NPN Silicon Epitaxial Transistor

2SC1815-O 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.22
最大集电极电流 (IC):0.15 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):350
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

2SC1815-O 数据手册

 浏览型号2SC1815-O的Datasheet PDF文件第2页浏览型号2SC1815-O的Datasheet PDF文件第3页 
2SC1815-O  
2SC1815-Y  
2SC1815-GR  
2SC1815-BL  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF  
NPN Silicon  
Epitaxial Transistor  
Amplifier and General Purpose Applications.  
Capable of 0.4Watts of Power Dissipation.  
Collector-current 0.15A  
Collector-base Voltage 60V  
Marking : C1815  
x
·
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
TO-92  
Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS  
A
E
Compliant. See ordering information)  
Operating and storage junction temperature range:-55oC to +125oC  
B
C
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage*  
50  
60  
5
Vdc  
Vdc  
(I =0.1mAdc, IB=0)  
C
Collector-Base Breakdown Voltage  
(I =100uAdc, IE=0)  
C
Emitter-Base Breakdown Voltage  
(IE=100uAdc,IC=0)  
Collector Cutoff Current  
Vdc  
0.1  
0.1  
0.1  
uAdc  
uAdc  
uAdc  
(VCB=60Vdc, I =0Adc)  
E
ICEO  
Collector Cutoff Current  
(VCB=50Vdc, I =0Adc)  
E
IEBO  
Emitter Cutoff Current  
D
(VEB=5.0Vdc, I =0Adc)  
C
ON CHARACTERISTICS  
hFE(1)  
VCE(sat)  
VBE(sat)  
VBE  
DC Current Gain*  
(I =2.0mAdc, VCE=6.0Vdc)  
70  
700  
C
Collector-Emitter Saturation Voltage  
E
(I =100mAdc, IB=10mAdc)  
0.25  
Vdc  
C
C
B
G
Base-Emitter Saturation Voltage  
(I =100mAdc, IB=10mAdc)  
1.0  
1.45  
Vdc  
Vdc  
C
DIMENSIONS  
Base-Emitter Voltage  
(I =310mAdc)  
E
---  
80  
INCHES  
MM  
DIM  
A
B
C
D
MIN  
.170  
.170  
.550  
.010  
.130  
.010  
MAX  
MIN  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
.190  
.190  
.590  
.020  
.160  
.104  
SMALL-SIGNAL CHARACTERISTICS  
fT  
Transistor Frequency  
(I =1.0mAdc, VCE=10Vdc, f=30MHz)  
C
MHz  
E
G
CLASSIFICATION OF HFE (1)  
Rank  
Range  
O
70-140  
Y
GR  
200-400  
BL  
350-700  
120-240  
www.mccsemi.com  
1 of 3  
Revision: C  
2011/08/22  

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