5秒后页面跳转
2SC1623L6 PDF预览

2SC1623L6

更新时间: 2024-01-02 15:24:22
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
1页 63K
描述
NPN Silicon Epitaxial Transistors

2SC1623L6 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
风险等级:5.07最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

2SC1623L6 数据手册

  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
2SC1623  
Features  
·
·
High DC Current Gain: hFE=200 TYP.(VCE=6.0V, I =1.0mA)  
C
NPN Silicon  
High voltage: VCEO=50V  
Epitaxial Transistors  
Maximum Ratings  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Rating  
50  
60  
5.0  
100  
200  
-55 to +150  
-55 to +150  
Unit  
V
V
SOT-23  
A
D
V
mA  
mW  
OC  
OC  
PC  
Collector power dissipation  
Junction Temperature  
Storage Temperature  
B
C
TJ  
TSTG  
F
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
H
G
J
OFF CHARACTERISTICS  
ICBO  
Collector Cutoff Current  
(VCB=60Vdc,IE=0)  
Emitter Cutoff Current  
(VEB=5.0Vdc, IC=0)  
---  
---  
---  
---  
0.1  
0.1  
uAdc  
uAdc  
K
DIMENSIONS  
MM  
IEBO  
INCHES  
MIN  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
ON CHARACTERISTICS  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
hF  
DC Current Gain*  
---  
(I =1.0mAdc, VCE=6.0Vdc)  
90  
200  
600  
C
VCE(sat)  
VBE(SAT)  
VBE  
Collector Saturation Voltage*  
(I =100mAdc, I =10mAdc)  
---  
---  
0.15  
0.86  
0.3  
1.0  
0.65  
---  
Vdc  
Vdc  
Vdc  
pF  
C
B
F
G
H
J
Base Saturation Voltage*  
(I =100mAdc,I =10mAdc)  
C
B
.085  
.37  
Base Emitter Voltage*  
K
(VCE=6.0Vdc, I =1.0mAdc)  
0.55 0.62  
C
Suggested Solder  
Pad Layout  
Collector Capacitance  
(VCB=6.0Vdc, IE=0, f=1.0MHz)  
Gain Bandwidth product  
(VCE=6.0Vdc, IE=10mAdc)  
Cob  
fT  
---  
---  
3.0  
250  
.031  
.800  
---  
MHz  
.035  
.900  
.079  
2.000  
inches  
mm  
hFE CLASSIFICATION  
Marking  
hFE  
L4  
90-180  
L5  
135-270  
L6  
200-400  
L7  
300-600  
.037  
.950  
* Pulse Test PW<350us, duty cycle<2%  
.037  
.950  
www.mccsemi.com  
Revision: 2  
2003/04/30  

与2SC1623L6相关器件

型号 品牌 获取价格 描述 数据表
2SC1623-L6 MCC

获取价格

NPN Silicon Epitaxial Transistors
2SC1623-L6 KEXIN

获取价格

NPN Transistors
2SC1623-L6 YANGJIE

获取价格

SOT-23
2SC1623-L6_11 MCC

获取价格

NPN Silicon Epitaxial Transistors
2SC1623L6-A NEC

获取价格

暂无描述
2SC1623-L6-HF KEXIN

获取价格

NPN Transistors
2SC1623L6-L RENESAS

获取价格

2SC1623L6-L
2SC1623-L6-T MCC

获取价格

Transistor
2SC1623L6-T1B RENESAS

获取价格

100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN
2SC1623L6-T1B-A RENESAS

获取价格

100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN