Power Transistors
2SC1567, 2SC1567A
Silicon NPN epitaxial planar type
Unit: mm
+0.5
–0.1
For low-frequency high power driver
8.0
3.2 0.2
Complementary to 2SA0794 (2SA794) and 2SA0794A (2SA794A)
φ 3.16 0.1
I Features
•
•
High collector to emitter voltage VCEO
Optimum for the driver stage of low-frequency and 40 W to 100 W
output amplifier
•
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
0.75 0.1
4.6 0.2
0.5 0.1
2.3 0.2
I Absolute Maximum Ratings TC = 25°C
0.5 0.1
1.76 0.1
Parameter
Symbol
Rating
Unit
1 : Emitter
2 : Collector
3 : Base
2SC1567
2SC1567A
2SC1567
2SC1567A
VCBO
100
V
Collector to base
1
2
3
voltage
120
TO-126B Package
VCEO
100
V
Collector to
emitter voltage
120
Emitter to base voltage
Peak collector current
Collector current
VEBO
ICP
IC
5
V
A
1
0.5
A
Collector power dissipation *
Junction temperature
Storage temperature
PC
1.2
W
°C
°C
Tj
150
Tstg
−55 to +150
Note) : Without heat sink
*
I Electrical Characteristics TC = 25°C
Parameter
Symbol
Conditions
Min
100
120
5
Typ
Max
Unit
2SC1567
VCEO
IC = 100 µA, IB = 0
V
Collector to emitter
voltage
2SC1567A
Emitter to base voltage
VEBO
IE = 1 µA, IC = 0
V
*
Forward current transfer ratio
hFE1
VCE = 10 V, IC = 150 mA
VCE = 5 V, IC = 500 mA
IC = 500 mA, IB = 50 mA
IC = 500 mA, IB = 50 mA
65
130
100
0.2
330
hFE2
VCE(sat)
VBE(sat)
fT
50
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
0.4
1.2
V
V
0.85
120
11
VCB = 10 V, IE = −50 mA, f = 200 MHz
MHz
pF
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
20
Note) : Rank classification
*
Rank
R
S
hFE1
130 to 220 185 to 330
Note) The part numbers in the parenthesis show conventional part number.
1