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2SC1472K PDF预览

2SC1472K

更新时间: 2024-11-16 06:16:15
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号双极晶体管
页数 文件大小 规格书
6页 175K
描述
Silicon NPN Epitaxial, Darlington

2SC1472K 技术参数

生命周期:Transferred包装说明:CYLINDRICAL, O-PBCY-W3
Reach Compliance Code:unknown风险等级:5.45
Is Samacsys:NJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOMBase Number Matches:1

2SC1472K 数据手册

 浏览型号2SC1472K的Datasheet PDF文件第2页浏览型号2SC1472K的Datasheet PDF文件第3页浏览型号2SC1472K的Datasheet PDF文件第4页浏览型号2SC1472K的Datasheet PDF文件第5页浏览型号2SC1472K的Datasheet PDF文件第6页 
2SC1472(K)  
Silicon NPN Epitaxial, Darlington  
REJ03G0688-0200  
(Previous ADE-208-1054)  
Rev.2.00  
Aug.10.2005  
Application  
High gain amplifier  
Outline  
RENESAS Packagcode: PRSS0003DA-A  
(Package name: 2 (1))  
1. Emitter  
2. Collector  
3. Base  
3
2
1
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Collector to base voltage  
S
VC
VCEO  
VEBO  
IC  
Unit  
V
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
V
V
mA  
mA  
mW  
°C  
°C  
Collector peak current  
Collector power dissipation  
Junction temperature  
Storage temperature  
iC(peak)  
PC  
Tj  
0  
Tstg  
–55 to +150  
Rev.2.00 Aug 10, 2005 page 1 of 5  

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TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 70MA I(C) | TO-92