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2SC1473AP PDF预览

2SC1473AP

更新时间: 2024-11-15 23:20:11
品牌 Logo 应用领域
其他 - ETC 晶体晶体管放大器
页数 文件大小 规格书
4页 60K
描述
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 70MA I(C) | TO-92

2SC1473AP 数据手册

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Transistor  
2SC1473, 2SC1473A  
Silicon NPN triple diffusion planer type  
For general amplification  
Unit: mm  
4.0±0.2  
2SC1473 complementary to 2SA1018  
2SC1473A complementary to 2SA1767  
5.0±0.2  
Features  
High collector to emitter voltage VCEO  
.
High transition frequency fT.  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
Ratings  
250  
Unit  
0.45+00..12  
0.45+00..12  
Collector to  
2SC1473  
1.27  
1.27  
VCBO  
V
2SC1473A  
2SC1473  
base voltage  
Collector to  
300  
200  
VCEO  
V
1:Emitter  
2:Collector  
3:Base  
JEDEC:TO–92  
EIAJ:SC–43A  
1 2 3  
emitter voltage 2SC1473A  
Emitter to base voltage  
Peak collector current  
Collector current  
300  
VEBO  
ICP  
IC  
7
V
mA  
mA  
mW  
˚C  
2.54±0.15  
100  
70  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
750  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Collector cutoff  
current  
Symbol  
Conditions  
min  
typ  
max  
Unit  
2SC1473  
V
CE = 120V, IB = 0  
1
1
ICEO  
µA  
2SC1473A  
VCE = 120V, IB = 0  
Collector to emitter 2SC1473  
200  
300  
7
VCEO  
VEBO  
IC = 100µA, IC = 0  
V
V
voltage  
2SC1473A  
Emitter to base voltage  
IE = 1µA, IC = 0  
*
Forward current transfer ratio  
hFE  
VCE = 10V, IC = 5mA  
30  
220  
1.2  
Collector to emitter saturation voltage VCE(sat)  
IC = 50mA, IB = 5mA  
V
MHz  
pF  
Transition frequency  
fT  
VCB = 10V, IE = –10mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
50  
80  
Collector output capacitance  
Cob  
10  
*hFE Rank classification  
Rank  
hFE  
P
Q
R
30 ~ 100  
60 ~ 150  
100 ~ 220  
1

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