Datasheet > 2SC1317S

2SC1317S

更新时间： 2024-09-24 23:20:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
4页	69K
描述
TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 500MA I(C) \| TO-92

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中文翻译

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数据手册

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2SC1317S 数据手册

Transistor

2SC1317, 2SC1318

Silicon NPN epitaxial planer type

For low-frequency power amplification and driver amplification

Complementary to 2SA0719 (2SA719) and 2SA0720 (2SA720)

Unit: mm

4.0 0.2

5.0 0.2

Features

Low collector to emitter saturation voltage V_CE(sat)

Complementary pair with 2SA0719 and 2SA0720.

Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

Ratings

Unit

Collector to

2SC1317

2SC1318

2SC1317

V_CBO

0.45–⁺0⁰.^.1²

0.45⁺^–0⁰^.^.¹²

base voltage

Collector to

1.27

V_CEO

emitter voltage 2SC1318

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

I_C

1 2 3

1:Emitter

2:Collector

3:Base

JEDEC:TO–92

EIAJ:SC–43A

2.54 0.15

500

˚C

Collector power dissipation

Junction temperature

Storage temperature

P_C

625

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

Collector cutoff current

V_CB= 20V, I_E= 0

0.1

µA

Collector to base

voltage

2SC1317

2SC1318

V_CBO

I_C= 10µA, I_E= 0

Collector to emitter 2SC1317

V_CEO

V_EBO

I_C= 10mA, I_B= 0

voltage

2SC1318

Emitter to base voltage

I_E= 10µA, I_C= 0

V_CE= 10V, I_C= 150mA^*2

V_CE= 10V, I_C= 500mA^*2

I_C= 300mA, I_B= 30mA

V_CB= 10V, I_E= –50mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

160

340

h_FE1

h_FE2

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

0.35

1.1

200

0.6

1.5

Transition frequency

f_T

MHz

Collector output capacitance

C_ob

^*2Pulse measurement

FE1

Rank classification

Rank

h_FE1

85 ~ 170

120 ~ 240

170 ~ 340

Note.) The Part numbers in the Parenthesis show conventional part number.

12 3 4

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