Transistor
2SC1317, 2SC1318
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SA0719 (2SA719) and 2SA0720 (2SA720)
Unit: mm
4.0 0.2
5.0 0.2
Features
I
G
Low collector to emitter saturation voltage VCE(sat)
.
G
Complementary pair with 2SA0719 and 2SA0720.
Absolute Maximum Ratings (Ta=25˚C)
I
Parameter
Symbol
Ratings
Unit
Collector to
2SC1317
2SC1318
2SC1317
30
VCBO
V
0.45–+00..12
0.45+–00..12
base voltage
Collector to
60
1.27
1.27
25
VCEO
V
emitter voltage 2SC1318
Emitter to base voltage
Peak collector current
Collector current
50
VEBO
ICP
IC
7
1
V
A
1 2 3
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
2.54 0.15
500
mA
mW
˚C
Collector power dissipation
Junction temperature
Storage temperature
PC
625
Tj
150
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
Collector cutoff current
VCB = 20V, IE = 0
0.1
µA
Collector to base
voltage
2SC1317
2SC1318
30
60
25
50
7
VCBO
IC = 10µA, IE = 0
V
Collector to emitter 2SC1317
VCEO
VEBO
IC = 10mA, IB = 0
V
V
voltage
2SC1318
Emitter to base voltage
IE = 10µA, IC = 0
VCE = 10V, IC = 150mA*2
VCE = 10V, IC = 500mA*2
IC = 300mA, IB = 30mA
IC = 300mA, IB = 30mA
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
85
40
160
90
340
*1
hFE1
hFE2
Forward current transfer ratio
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
0.35
1.1
200
6
0.6
1.5
V
V
Transition frequency
fT
MHz
pF
Collector output capacitance
Cob
15
*2 Pulse measurement
*1
h
FE1
Rank classification
Rank
hFE1
Q
R
S
85 ~ 170
120 ~ 240
170 ~ 340
Note.) The Part numbers in the Parenthesis show conventional part number.
1